DocumentCode
1838937
Title
Shallow trench isolation scatterometry metrology in a high volume fab
Author
Lensing, Kevin R. ; Markle, Richard J. ; Stirton, Broc ; Laughery, Michael A.
Author_Institution
Adv. Micro Devices Inc., Austin, TX, USA
fYear
2001
fDate
2001
Firstpage
195
Lastpage
198
Abstract
Focuses on the current roles of metrology systems associated with a shallow trench isolation (STI) run-to-run (RtR) controller and recent advances AMD has made applying new, ODP scatterometry-based metrology to this application. It will compare industry standard metrology techniques to ODP, with the objective of identifying the STI metrology system or systems that will produce timely and reliable data streams with the largest quantity of process information at the highest possible signal to noise (S/N) ratio
Keywords
ellipsometry; integrated circuit measurement; isolation technology; process control; reflectometry; surface topography measurement; AMD; ODP; high volume fab; optical digital profilometry; process information; reliable data streams; run-to-run controller; scatterometry metrology; shallow trench isolation; signal to noise ratio; Automatic control; Control systems; Geometrical optics; Metrology; Optical films; Optical scattering; Radar measurements; Signal processing; Software libraries; Timbre;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962947
Filename
962947
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