High performance circuits in 0.18 /spl mu/m SiGe BiCMOS process for wireless applications

Author

Peihua Ye ; Agarwal, B. ; Reddy, M. ; Li, L. ; Cheng, J. ; Mudge, P.C. ; McCarthy, E. ; Lloyd, S.L.

Author_Institution

Conexant Syst. Inc., Newport Beach, CA, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

329

Lastpage

332

Abstract

Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining increasing popularity for RF circuits in wireless applications due to high performance, low cost, high yield and higher levels of integration with mixed signal and digital CMOS circuits. Four test circuits were designed and fabricated in Conexant´s 0.18 /spl mu/m SiGe BiCMOS process to evaluate the performance benefits provided by this state of the art process technology. The RF performance achieved in this process clearly makes this a process of choice for future RFIC products.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; cellular arrays; integrated circuit technology; integrated circuit yield; mixed analogue-digital integrated circuits; 0.18 micron; BiCMOS process; Conexant; RF circuits; SiGe; cellular phones; cost; mixed signal circuits; process technology; wireless applications; yield; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit testing; Costs; Germanium silicon alloys; RF signals; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012060

Filename

1012060