Title :
High performance circuits in 0.18 /spl mu/m SiGe BiCMOS process for wireless applications
Author :
Peihua Ye ; Agarwal, B. ; Reddy, M. ; Li, L. ; Cheng, J. ; Mudge, P.C. ; McCarthy, E. ; Lloyd, S.L.
Author_Institution :
Conexant Syst. Inc., Newport Beach, CA, USA
Abstract :
Silicon germanium bipolar CMOS (SiGe BiCMOS) process technology is gaining increasing popularity for RF circuits in wireless applications due to high performance, low cost, high yield and higher levels of integration with mixed signal and digital CMOS circuits. Four test circuits were designed and fabricated in Conexant´s 0.18 /spl mu/m SiGe BiCMOS process to evaluate the performance benefits provided by this state of the art process technology. The RF performance achieved in this process clearly makes this a process of choice for future RFIC products.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; cellular arrays; integrated circuit technology; integrated circuit yield; mixed analogue-digital integrated circuits; 0.18 micron; BiCMOS process; Conexant; RF circuits; SiGe; cellular phones; cost; mixed signal circuits; process technology; wireless applications; yield; BiCMOS integrated circuits; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit testing; Costs; Germanium silicon alloys; RF signals; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012060
