Title :
Hybrid low-k/Cu dual damascene process for 45-32 nm technology node using self-assembled porous-silica ultra low-k films
Author :
Chikaki, S. ; Shimoyama, M. ; Yagi, R. ; Yoshino, T. ; Ono, T. ; Ishikawa, A. ; Fujii, N. ; Hata, N. ; Nakayama, T. ; Kohmura, K. ; Tanaka, H. ; Goto, T. ; Kawahara, J. ; Sonoda, Y. ; Matsuo, H. ; Seino, Y. ; Takada, S. ; Kunimi, N. ; Uchida, Y. ; Hishiya
Author_Institution :
MIRAI, Assoc. of Super-Adv. Electron. Technol., Ibaraki, Japan
Abstract :
Self-assembled porous-silica ultra low-k films (k=2.1) were integrated for 45-32 nm technology node low-k/Cu dual damascene interconnects. Porosity and pore size distributions of the low-k film were controlled by controlling the concentration of the surfactant so that a tight distribution of dielectric constant was achieved. Self-assembled porous silica low-k/Cu damascene interconnects were successfully formed by developing dry etching, low pressure CMP, post CMP cleaning, Cu electroplating solution as well as a TMCTS process recovery treatment. The feasibility of low-k/Cu damascene was confirmed. Electrical characteristics showed a potential capability of the self-assembled porous-silica low-k film for the 45-32 nm technology node.
Keywords :
chemical mechanical polishing; copper; dielectric thin films; electroplating; etching; integrated circuit interconnections; permittivity; porosity; porous materials; silicon compounds; surface cleaning; surfactants; 45 to 32 nm; Cu-SiO2; TMCTS process recovery treatment; dielectric constant; dry etching; dual damascene interconnects; electroplating; hybrid low-k/dual damascene process; low pressure CMP; pore size distributions; porosity distributions; post CMP cleaning; process integration feasibility study; self-assembled porous ultra low-k films; surfactant concentration; Adhesives; Chemical elements; Chemical processes; Chemical vapor deposition; Cleaning; Dielectric constant; Plasma applications; Plasma measurements; Silicon compounds; Size control;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499919
