Low-frequency noise figures-of-merit in RF SiGe HBT technology

Author

Jin Tang ; Guofu Niu ; Zhenrong Jin ; Cressler, J.D. ; Shiming Zhang ; Joseph, A.J. ; Harame, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

333

Lastpage

336

Abstract

We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cutoff frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device noise; semiconductor materials; RF SiGe HBT technology; SiGe; biasing current; breakdown voltage; corner frequency; cutoff frequency; figure-of-merit; low-frequency noise; multiple SiGe profile; multiple collector doping profile; Cutoff frequency; Doping profiles; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012061

Filename

1012061