DocumentCode
1838994
Title
COM2 enhanced graded base SiGe technology for high speed applications
Author
Ivanov, T. ; Carroll, Mariana ; Moinian, S. ; Mastrapasqua, M. ; Frei, A. ; Chen, Aaron ; King, Candice ; Hamad, Amr A. ; Martin, Eric ; Shive, S. ; Esry, T. ; Lee, Chi-Kwan ; Johnson, R. ; Sorsch, T. ; Carroll, Mariana ; Banoo, K. ; Smith, Paul ; Cochran
Author_Institution
Agere Syst., Orlando, FL, USA
fYear
2002
fDate
3-4 June 2002
Firstpage
337
Lastpage
340
Abstract
The COM2 Enhanced Graded Base SiGe modular BiCMOS technology has been developed. It is based on the COM2 digital CMOS process. The technology achieves peak Ft=100 GHz, peak Fmax=101 GHz, peak /spl beta/=186 and BVcex=2.05 V. Ft-BVcex product of 205 and good across wafer uniformity are demonstrated.
Keywords
BiCMOS digital integrated circuits; Ge-Si alloys; high-speed integrated circuits; integrated circuit technology; semiconductor materials; 100 GHz; 101 GHz; 2.05 V; BiCMOS technology; COM2 process; SiGe; across wafer uniformity; enhanced graded base technology; high speed applications; Boron; Electric resistance; Germanium silicon alloys; Libraries; MOS devices; Power engineering and energy; Radiofrequency integrated circuits; Resistors; Silicon germanium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location
Seattle, WA, USA
ISSN
1529-2517
Print_ISBN
0-7803-7246-8
Type
conf
DOI
10.1109/RFIC.2002.1012062
Filename
1012062
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