DocumentCode :
1839030
Title :
Multiple objective APC application for an oxide CMP process in a high volume production environment
Author :
Wollstein, Dirk ; Raebiger, Jan ; Lingel, Stefan
Author_Institution :
AMD, Dresden, Germany
fYear :
2001
fDate :
2001
Firstpage :
207
Lastpage :
210
Abstract :
Presents three independent run-to-run APC controllers for the chemical-mechanical polishing (CMP). The controllers are applied to oxide polish processes in AMD´s Fab30 to improve (a) the lot-to-lot variation, (b) to reduce the wafer-to-wafer variation and (c) to increase the wafer uniformity of the post-polish oxide thickness. Since different products and layers are processed on the same tools a method was introduced to compensate device and layer dependencies. The control algorithms were extended to a bi-layered polish process. Significant improvement was achieved for the individual controllers applied in the high volume production environment of Fab30 under the condition of a permanently changing product mix
Keywords :
chemical mechanical polishing; integrated circuit technology; process control; AMD´s Fab30; advance process control; bi-layered polish process; chemical-mechanical polishing; high volume production environment; independent run-to-run controllers; layer dependencies; lot-to-lot variation; multiple objective APC application; oxide CMP process; permanently changing product mix; post-polish oxide thickness; wafer uniformity; wafer-to-wafer variation; Application software; Chemical industry; Chemical processes; Chemical products; Communication system control; Electronics industry; Integrated circuit manufacture; Metrology; Production; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962950
Filename :
962950
Link To Document :
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