Title :
Low cost and high reliability CMOS technologies, by "retro process sequence"
Author :
Sekikawa, Nobuyuki ; Ando, Wataru ; Momen, Masaaki ; Hirata, Koichi
Author_Institution :
Sanyo Electr. Co. Ltd., Gunma, Japan
Abstract :
Describes a novel low-cost CMOS process, which reduces the number of process modules by reversing the process sequence before gate electrode formation, "retro process sequence". The damage of gate oxide from ion implantation and heat treatment are investigated by TDDB and burn-in. The results suggest this novel process can be applied to LSIs. It is possible to cut down the production cost of wafer before gate electrode formation by 40%
Keywords :
CMOS integrated circuits; heat treatment; integrated circuit economics; integrated circuit reliability; ion implantation; large scale integration; process control; semiconductor device breakdown; CMOS technologies; LSIs; TDDB; burn-in; gate electrode formation; gate oxide damage; heat treatment; ion implantation; process modules; production cost; retro process sequence; CMOS process; CMOS technology; Costs; Degradation; Electrodes; Heat treatment; Implants; Ion implantation; Oxidation; Temperature;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962951
