Title :
Effects of elastic modulus on the fracture behavior of low-dielectric constant films
Author :
Tsui, Ting Y. ; Griffin, A.J., Jr. ; Jacques, Jeannette ; Fields, Russell ; McKerrow, Andrew J. ; Kraft, Robert
Author_Institution :
Silicon Technol. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A model that predicts channel-crack propagation behavior in silica-based low-κ dielectrics (low-κ) was developed. A solid-mechanics theory that governs fracture behavior was used to obtain low-κ material constants. These fracture parameters were used to predict crack behaviors in five low-κ films with distinct elastic moduli. The model developed demonstrates that crack propagation rate is extremely sensitive to modulus, especially when the material is compliant.
Keywords :
cracks; dielectric thin films; elastic moduli; fracture mechanics; SiO2; channel crack propagation rate; compliant materials; crack behavior prediction; dielectric film fracture behavior; elastic modulus effects; low-dielectric constant films; low-k elastic modulus; solid-mechanics theory; Chemicals; Dielectric materials; Dielectric thin films; Instruments; Integrated circuit modeling; Plasma temperature; Residual stresses; Semiconductor films; Silicon; Temperature distribution;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499924
