Benchmarking 193 nm photoresists for etch resistance

Author

Bakshi, Vivek ; Smith, Gregory ; Alzaben, Tawfeeq ; Beach, James ; Spurlock, Kyle ; Berger, Rich ; Dorris, S.-T.L. ; Pearson, Spencer ; Holladay, Dan ; Woehl, Juergen

Author_Institution

Adv. Technol. Dev. Facility, Int. SEMATECH Inc., Austin, TX, USA

fYear

2001

fDate

2001

Firstpage

215

Lastpage

218

Abstract

The semiconductor industry plans to use 193 nm resist for patterning in the 130 to 100 nm node. The suppliers of 193 nm resist continue to introduce improved versions of their present resists and additional resists based on new chemical structures. In the advanced technology development facility (ATDF) of International SEMATECH we have developed benchmarking methodology to provided initial screening data on lithographic and etch performance on a number of 193 nm resists to our member companies. This paper outlines our benchmarking approach and gives initial benchmarking results for the etch performance

Keywords

etching; integrated circuit technology; photoresists; ultraviolet lithography; 130 to 100 nm; 193 nm; Advanced Technology Development Facility; International SEMATECH; benchmarking; chemical structures; etch performance; etch resistance; initial screening data; photoresists; semiconductor industry; Argon; Chemical technology; Electronics industry; Etching; Plasma applications; Plasma materials processing; Printing; Resists; Silicon; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962952

Filename

962952