First-principle molecular model of PECVD SiOCH film for the mechanical and dielectric property investigation

Author

Tajima, N. ; Hamada, T. ; Ohno, T. ; Yoneda, K. ; Kobayashi, N. ; Hasaka, T. ; Fnoue, M.

Author_Institution

Comput. Mater. Sci. Center, Nat. Inst. for Mater. Sci., Tsukuba, Japan

fYear

2005

fDate

6-8 June 2005

Firstpage

66

Lastpage

68

Abstract

The microstructure of PECVD carbon-doped oxide (SiOCH) film has been obtained for the first time by using a theoretical method to create molecular models of amorphous polymers with cross-links. This method generates atomic coordinates of chemically possible SiOCH film structures from a given atomic composition. We have confirmed that this method creates reasonable SiOCH film structures that explain the experimental results of IR spectrum, dielectric constant, and Young´s modulus. Consequently, this method gives us a guideline for decreasing the density of PECVD SiOCH films having acceptable mechanical properties for interconnect applications.

Keywords

Young´s modulus; dielectric thin films; molecular dynamics method; permittivity; plasma CVD coatings; polymer films; silicon compounds; IR spectrum; PECVD film density reduction; SiOCH; Young´s modulus; amorphous polymers; chemically possible film structure atomic coordinates; constant pressure molecular dynamics simulation; dielectric constant; interconnect dielectrics; microstructure; molecular models; polymer cross-links; Amorphous materials; Chemicals; Collaboration; Computational modeling; Dielectric constant; Materials science and technology; Mechanical factors; Microstructure; Polymer films; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499925

Filename

1499925