DocumentCode
1839186
Title
Impact of interconnect technology scaling on SOC design methodologies
Author
Nagaraj, N.S. ; Hunter, William R. ; Chidambaram, P.R. ; Garibay, Ty ; Narasimha, Usha ; Hill, Anthony ; Shichijo, Hisashi
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
2005
fDate
6-8 June 2005
Firstpage
71
Lastpage
73
Abstract
The impact of interconnect technology scaling on RC delay is a well-researched topic. This paper provides a fresh perspective on the impact of interconnect technology scaling on SOC designs. The impact of intra-cell RC parameters on circuit performance is described. The importance of managing the intra-cell RC scaling for low power designs is emphasized. The impact of fill metal and CMP on analog circuits is illustrated. The significance of accurate RC extraction for validating the performance and signal integrity of SOC designs is discussed. Using a 64M transistor SOC design, the effects of noise and EM reliability are highlighted. The impact of inductance on clock skew, noise and reliability are discussed.
Keywords
chemical mechanical polishing; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit noise; integrated circuit reliability; low-power electronics; system-on-chip; CMP; EM reliability; RC delay; RC extraction; SOC design; SOC noise; analog circuit fill metal effects; clock skew; inductance effects; interconnect technology scaling effects; intra-cell RC parameters; intra-cell RC scaling; low power design; noise effects; signal integrity; Analog circuits; Circuit noise; Circuit optimization; Clocks; Delay; Design methodology; Energy management; Inductance; Integrated circuit interconnections; Signal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN
0-7803-8752-X
Type
conf
DOI
10.1109/IITC.2005.1499928
Filename
1499928
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