Development of photo-resist stripping process using ozone and water vapor

Author

Noda, Seiji ; Miyamoto, Makoto ; Horibe, Hideo ; Oya, Izumi ; Kuzumoto, Masaki ; Kataoka, Tatsuo

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2001

fDate

2001

Firstpage

233

Lastpage

236

Abstract

A resist stripping process using highly-concentrated ozone gas and water vapor has been developed This method features higher removal rate and/or an eco-friendly process, compared with conventional methods. Influences of substrate temperature, water vapor concentration, anti residence time, on the removal rate have been experimentally investigated in detail. An FT-IR spectroscope was used to analyze the substrate before/after the treatment in order to clarify the mechanism of the resist stripping by ozone and water vapor It is shown that water plays an important role in the resist decomposition. Main factor of higher removal rate over 1 μm/min in this method is also discussed

Keywords

Fourier transform spectra; infrared spectra; integrated circuit manufacture; ozone; photoresists; surface treatment; water; FTIR spectroscopy; H₂O; O₃; highly-concentrated ozone gas; ozone processing; photoresist stripping process; removal rate; residence time; resist decomposition; semiconductor manufacturing; substrate temperature; water vapor concentration; water vapour processing; Chemical processes; Glass; Inductors; Plasma temperature; Resists; Spectroscopy; Substrates; Surface cleaning; Surface texture; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.962956

Filename

962956