Title :
SiGe/Si power HBTs for X- to K-band applications
Author :
Mohammadi, S. ; Zhenqiang Ma ; Jaehoon Park ; Bhattacharya, P. ; Katehi, L.P.B. ; Ponchak, G.E. ; Alterovitz, S.A. ; Strohm, K.M. ; Luy, J.-F.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High performance power SiGe/Si HBTs at X-band (8.4 GHz), Ku-band (12.6 GHz) and K-band (18 GHz) have been demonstrated. Under continuous wave operation, a single 20-finger Si/Si/sub 0.75/Ge/sub 0.25//Si (emitter area of 1200 /spl mu/m/sup 2/) HBT, biased in class AB, delivers 28.5 dBm (700 mW) of RF output power at X-band, 25.5 dBm (350 mW) at Ku-band and 22.5 dBm (180 mW) at K-band. These represent the state-of-the-art power performance of SiGe-based HBTs at frequencies above X-band. An in-depth analysis of the power performance of HBTs with different geometry and configuration is also presented, which will eventually serve as a design guide for SiGe/Si power HBTs at different frequency of operation.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; silicon; 12.6 GHz; 18 GHz; 180 mW; 350 mW; 700 mW; 8.4 GHz; DC characteristics; K-band; Ku-band; SiGe-Si; X-band; continuous wave operation; design guide; figure of merit; high performance; load-pull characterization; multi-finger HBT; physical layout; power HBT; power amplifiers; CMOS technology; Fingers; Gallium arsenide; Geometry; Germanium silicon alloys; Heterojunction bipolar transistors; K-band; Radio frequency; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012070
