RF power characteristics of SiGe heterojunction bipolar transistor with high breakdown voltage structures

Author

Matsuno, T. ; Nishii, K. ; Sonetaka, S. ; Toyoda, Y. ; Iwamoto, N.

fYear

2002

fDate

3-4 June 2002

Firstpage

377

Lastpage

379

Abstract

The collector profile dependences of RF power characteristics of SiGe HBT have been studied. A selectively ion implanted collector (SIC) structure with a thick and lightly doped collector layer showed good RF power characteristics including the adjacent-channel-power-ratio characteristics for middle class power around output power of 16 dBm while maintaining BV/sub CEO/ over 5 V. The maximum BVCEO of 9 V was obtained using the same process only by removing the SIC structure. Both structures are available to fabrication of multi-stage RF power amplifier on to one chip by single process.

Keywords

Ge-Si alloys; S-parameters; UHF bipolar transistors; heterojunction bipolar transistors; power bipolar transistors; semiconductor device breakdown; DC characteristics; RF power characteristics; S-parameter measurements; SiGe; adjacent-channel-power-ratio; collector profile dependences; heterojunction bipolar transistor; high breakdown voltage structures; multistage RF power amplifier; selectively ion implanted collector; small signal characteristics; Breakdown voltage; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Power generation; Power transistors; Radio frequency; Silicon carbide; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012071

Filename

1012071