DocumentCode
1839302
Title
CVD copper metal for poly-Si thin film transistor
Author
He, Shusheng ; Nguyen, Tue
Author_Institution
Sharp Microelectron. Technol. Inc., Camas, WA, USA
fYear
1998
fDate
1-3 Jun 1998
Firstpage
301
Lastpage
303
Abstract
Due to the large size of AMLCD panels, the use of Cu lines in the panels is important to improve display performance. By using a TiN-Cu-TiN structure, we can use CVD copper lines as gate and source lines for poly-Si TFTs. The poly-Si TFTs using Cu have the same characteristics as TFTs using other metal lines
Keywords
chemical interdiffusion; chemical vapour deposition; copper; diffusion barriers; elemental semiconductors; liquid crystal displays; semiconductor device metallisation; silicon; thin film transistors; AMLCD panels; CVD copper lines; CVD copper metal; Cu lines; Si; TiN-Cu-TiN structure; TiN-Cu-TiN-Si; display performance; gate lines; metal lines; poly-Si TFTs; poly-Si thin film transistor; source lines; Annealing; Conductivity; Copper; Displays; Glass; Plasma temperature; Silicon; Substrates; Thin film transistors; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-4285-2
Type
conf
DOI
10.1109/IITC.1998.704930
Filename
704930
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