An active SiGe sub-harmonic direct-conversion receiver front-end design for 5-6 GHz band applications

Author

Svitek, R. ; Johnson, D. ; Raman, S.

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

395

Lastpage

398

Abstract

This paper describes a packaged SiGe RF front-end design for use in the Unlicensed National Information Infrastructure (U-NII) bands. The front-end is based on a sub-harmonic direct-conversion architecture and is composed of an LNA, I and Q x2 sub-harmonic mixers (SHMs), and an LO conditioning chain. The receiver is completely differential and is designed for operation from a 3.3 V supply. Simulated performance shows >25 dB conversion gain, 6.8 dB noise figure (cascode LNA), 0/spl deg/ I/Q phase imbalance, and 39.1 mA total current consumption. To the authors´ knowledge, this is the first 5-6 GHz SiGe active sub-harmonic direct-conversion receiver design presented in literature.

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; bipolar MMIC; harmonics; microwave links; radio receivers; semiconductor materials; 25 dB; 3.3 V; 39.1 mA; 5 to 6 GHz; 6.8 dB; LNA; LO conditioning chain; SiGe HBTs; SiGe heterojunction bipolar transistors; U-NII bands; Unlicensed National Information Infrastructure bands; differential topology; direct-conversion receiver; packaged SiGe RF front-end design; second-order distortion minimization; sub-harmonic direct-conversion architecture; sub-harmonic mixers; Bandwidth; Business; Circuits; Filters; Germanium silicon alloys; Noise figure; Performance gain; Radio frequency; Semiconductor device packaging; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012075

Filename

1012075