Title :
Transient opto-electric response in hydrogenated amorphous silicon and implications for high speed sensor devices
Author_Institution :
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
Abstract :
This paper analyzes the transient photocurrent of amorphous silicon photosensors, with emphasis on new device applications. The results show that response speeds in the GHz range can be achieved in amorphous silicon photodetectors with proper device structures and proper detection schemes
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; photodetectors; photodiodes; silicon; transient response; Si:H; detection schemes; device structures; high speed sensor devices; photosensors; response speeds; transient opto-electric response; transient photocurrent; Amorphous silicon; Electron mobility; Electron traps; Image sensors; Photoconductivity; Photodetectors; Photodiodes; Sensor arrays; Tail; Transient analysis;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503538
