DocumentCode
1839344
Title
Transient opto-electric response in hydrogenated amorphous silicon and implications for high speed sensor devices
Author
Shen, D.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL, USA
fYear
1995
fDate
24-28 Oct 1995
Firstpage
718
Lastpage
720
Abstract
This paper analyzes the transient photocurrent of amorphous silicon photosensors, with emphasis on new device applications. The results show that response speeds in the GHz range can be achieved in amorphous silicon photodetectors with proper device structures and proper detection schemes
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; photodetectors; photodiodes; silicon; transient response; Si:H; detection schemes; device structures; high speed sensor devices; photosensors; response speeds; transient opto-electric response; transient photocurrent; Amorphous silicon; Electron mobility; Electron traps; Image sensors; Photoconductivity; Photodetectors; Photodiodes; Sensor arrays; Tail; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503538
Filename
503538
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