Soft breakdown and hot carrier reliability of CMOS RF mixer and redesign

Author

Qiang Li ; Wei Li ; Jinlong Zhang ; Yuan, J.S.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

399

Lastpage

402

Abstract

In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.

Keywords

CMOS analogue integrated circuits; hot carriers; integrated circuit design; integrated circuit modelling; integrated circuit reliability; mixers (circuits); semiconductor device breakdown; CMOS RF down-conversion mixer; MOS transistor reliability; analog operation; circuit performance degradation; circuit performance model; device degradation; hot carrier degradation; mixer circuit hot-carrier reliability; mixer circuit operation conditions; mixer redesign strategies; mixer stress condition analysis; reliability estimation; soft breakdown reliability; Circuit analysis; Circuit optimization; Circuit simulation; Degradation; Electric breakdown; Hot carriers; MOSFETs; Performance analysis; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012076

Filename

1012076