High-performance AlO-laminated TaO MIM capacitors for RF-IC applications: effects of the AlO layer on electrical characteristics

Author

Takeda, Kenichi ; Mine, Toshiyuki ; Ishikawa, Tsuyoshi ; Imai, Toshinori ; Fujiwara, Tuyoshi

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

2005

fDate

6-8 June 2005

Firstpage

91

Lastpage

93

Abstract

The successful integration of a metal-insulator-metal (MIM) capacitor with an AlO/TaO/AlO stack is demonstrated. High capacitance density of more than 10 fF/μm² at 3.3 V and superior high-frequency characteristics are confirmed. The TDDB lifetime of the capacitor is strongly dependent on the electric field strength in the AlO layer, so the lifetime can be predicted by using the TDDB lifetime of a single-layer AlO capacitor. The capacitance voltage dependence of the AlO/TaO/AlO capacitor is dominated by the change in capacitance in the AlO layer. Thus, the voltage-linearity coefficients of single-layer AlO capacitors can be used to predict the coefficients of AlO/TaO/AlO capacitors.

Keywords

MIM devices; aluminium compounds; laminates; tantalum compounds; thin film capacitors; 3.3 V; AlO-TaO; RFIC capacitors; capacitance density; capacitance voltage dependence; capacitor TDDB lifetime; electric field strength; laminated MIM capacitors; metal-insulator-metal capacitors; voltage-linearity coefficient; Capacitance; Electric variables; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; Metal-insulator structures; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499936

Filename

1499936