Title :
Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors
Author :
Tai, Ya-Hsiang ; Su, F.C. ; Feng, M.S. ; Cheng, H.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Thin film transistors (TFTs) with various hydrogen concentrations in the amorphous silicon (a-Si:H) films and different silicon nitride (SiNx) gate compositions have been stressed with dc bias to realize the process-related device reliability. For the positive gate bias stress, the instability phenomena mainly come from the electron trapping in the SiNx. On the other hand, for the negative gate bias stress, the hydrogen-enhanced state creation in the a-Si:H films due to the defect pool effect will be offset by the hole trapping in the SiNx. Consequently, the reliability of the TFTs was improved by using the SiNx gates with less trap sites and reducing the hydrogen concentration in the a-Si:H films,
Keywords :
amorphous semiconductors; electron traps; elemental semiconductors; hole traps; hydrogen; semiconductor device reliability; silicon; silicon compounds; thin film transistors; Si:H-SiN; dc bias; defect pool effect; electron trapping; gate compositions; hole trapping; negative gate bias stress; positive gate bias stress; process-related device reliability; process-related instability mechanisms; thin film transistors; trap sites; Amorphous silicon; Distortion measurement; Electrodes; Electron traps; Etching; Hydrogen; Semiconductor films; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503542
