Title :
High linearity low-k BCB-bridged AlGaAs/InGaAs power HFETs
Author :
Hsien-Chin Chiu ; Ming-Jyh Hwu ; Shih-Cheng Yang ; Yi-Jen Chan
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taiwan, China
Abstract :
A novel low-k BCB (benzocyclobutene) bridged and passivated process for AlGaAs/InGaAs doped-channel power FETs with high reliability and linearity was characterized and developed. In this study, we applied the low-k BCB-bridged interlayer to replace the conventional air-bridged process and the SiN/sub x/ passivation technology of the 1 mm wide power device fabrication. This novel process technique demonstrates a lower power gain degradation under a high input power swing, and exhibits an improved adjacent channel power ratio (ACPR) than the air-bridged ones due to its lower gate leakage current. The power gain degradation ratio of BCB-bridged devices under a high input power operation (P/sub in/ = 5/spl sim/10 dBm) is 0.51 dB/dBm, and this value is 0.65 dB/dBm of conventional air-bridged devices.
Keywords :
III-V semiconductors; aluminium compounds; dielectric thin films; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; passivation; permittivity; power field effect transistors; 1 mm; ACPR improvement; AlGaAs-InGaAs; AlGaAs/InGaAs power HFETs; adjacent channel power ratio; benzocyclobutene; doped-channel power FETs; gate leakage current reduction; high linearity; high reliability; low-k BCB passivated process; low-k BCB-bridged interlayer; microwave power performance; power device fabrication; power gain degradation ratio; Degradation; FETs; Fabrication; HEMTs; Indium gallium arsenide; Leakage current; Linearity; MODFETs; Passivation; Silicon compounds;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012079
