Defect size distribution in VLSI chips

Author

Glang, R.

Author_Institution

IBM Corp., Manassas, VA, USA

fYear

1990

fDate

5-7 March 1990

Firstpage

57

Lastpage

60

Abstract

VLSI patterns consisting of parallel lines of polysilicon with different spacings have been electrically tested. The number of observed shorts was found to be related to the line spacings by using an analytical model for the defect sensitive pattern areas. The distribution of defect sizes in the range from 0.5 to 1.4 mu m is proportional to x/sup -3/. The exponent value agrees with earlier distribution studies concerning defects several micrometers in size.<>

Keywords

VLSI; integrated circuit technology; 0.5 to 1.4 micron; VLSI chips; VLSI patterns; analytical model; defect analysis; defect sensitive pattern areas; defect size distribution; different spacings; distribution of defect sizes; electrically tested; line spacings; number of observed shorts; parallel lines of polysilicon; polycrystalline Si lines; test structures; yield modelling; Analytical models; Artificial intelligence; Bismuth; Chemical processes; Chemical vapor deposition; Mathematical model; Pain; Size measurement; System testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1990. ICMTS 1990. Proceedings of the 1990 International Conference on

Conference_Location

San Diego, CA, USA

Type

conf

DOI

10.1109/ICMTS.1990.67880

Filename

67880