Title :
GaAs/GaAlAs quantum well infrared detector with bias-tuned wavelength and large absorption band-width
Author :
Du, Chun-Xia ; Deng, Jun ; Li, Qun ; Shen, Guang-Di
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
A new type of GaAs/GaAlAs quantum well infrared photodetectors with two different structures and features has been designed. For the first one, the detecting wavelength can be tuned by bias, and for the second one, the large absorption bandwidth can be obtained. They have better performances than that of the conventional GaAs/GaAlAs quantum well infrared photodetectors. They have a potential future. Simulation and preliminary experiments have been performed
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; semiconductor quantum wells; GaAs-GaAlAs; absorption bandwidth; bias-tuned wavelength; detecting wavelength; quantum well infrared detector; simulation; Charge carrier processes; Doping; Electromagnetic wave absorption; Electrons; Energy states; Gallium arsenide; Infrared detectors; Poisson equations; Radiation detectors; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503544
