Title :
A low-power silicon-on-sapphire tunable ultra-wideband transmitter
Author :
Tang, Wei ; Andreou, A.G. ; Culurciello, Eugenio
Author_Institution :
Electr. Eng. Dept., Yale Univ., New Haven, CT
Abstract :
A low-power tunable transmitter for ultra-wide band (UWB) radio was designed and fabricated. The design is based on a ring oscillator VCO, to produce short pulses. Both the pulse duration and frequency is controllable by two voltage biases. The transmitter can be used in both pulse-amplitude modulation (PAM) and pulse-position modulation (PPM). The circuit was fabricated on a 0.5mum silicon-on-sapphire CMOS process, and has been experimentally characterized with a transmitter and receiver module. The UWB transmitter produces monocycle pulses of 800 ps duration. The power consumption is 75muW when the pulse frequency is 3 MHz. The core pulse generator occupies 0.0091mm2 of silicon area.
Keywords :
CMOS integrated circuits; pulse amplitude modulation; pulse position modulation; radio receivers; radio transmitters; sapphire; silicon; ultra wideband communication; voltage-controlled oscillators; frequency 3 MHz; frequency control; low-power tunable transmitter; power 75 muW; pulse duration control; pulse-amplitude modulation; pulse-position modulation; receiver module; ring oscillator; silicon-on-sapphire CMOS process; silicon-on-sapphire tunable ultra-wideband transmitter; size 0.5 mum; time 800 ps; ultra-wide band radio; voltage-controlled oscillator; CMOS process; Energy consumption; Frequency; Pulse modulation; Radio transmitters; Ring oscillators; Tunable circuits and devices; Ultra wideband technology; Voltage control; Voltage-controlled oscillators; UWB transmitter; Ultra-wide band radio (UWB); pulse generator; pulse modulation;
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
DOI :
10.1109/ISCAS.2008.4541832
