Title : 
Characterization algorithm of failure distribution for LSI yield improvement
         
        
            Author : 
Sugimoto, Masaaki ; Tanaka, Mikio
         
        
            Author_Institution : 
Anal. Technol. Dev. Div., NEC Corp., Kanagawa, Japan
         
        
        
        
        
        
            Abstract : 
This paper describes an improvement in our algorithm, which can efficiently characterize a process-induced random failure distribution and a design-induced systematic failure distribution from unknown-induced failure distributions of a memory LSI, to predict a reason for yield degradation in it. The algorithm analyzes a function "T(f) isn\´t greater than 1or not" related to kind and content of "f". The "f" is a divisor of distances between failure-pairs. We have expanded the algorithm, which can pick out 7 characteristic failure distributions by using relationship between the failure densities and the function "T(f)"
         
        
            Keywords : 
failure analysis; integrated circuit yield; large scale integration; LSI yield; characterization algorithm; design-induced systematic failure distribution; failure distribution; process-induced random failure distribution; Algorithm design and analysis; Degradation; Failure analysis; Histograms; Large scale integration; Mathematics; Moore´s Law; National electric code; Shape; Testing;
         
        
        
        
            Conference_Titel : 
Semiconductor Manufacturing Symposium, 2001 IEEE International
         
        
            Conference_Location : 
San Jose, CA
         
        
            Print_ISBN : 
0-7803-6731-6
         
        
        
            DOI : 
10.1109/ISSM.2001.962966