• DocumentCode
    1839510
  • Title

    HREM analysis of ultra-thin oxides

  • Author

    Sinclair, R. ; Niwa, M. ; Kouzaki, T.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    739
  • Lastpage
    741
  • Abstract
    Ultra-thin SiO2 layers on Si (e.g., sub-10 nm) will be increasingly important in future VLSI devices. Precise control of thickness and interface roughness are important parameters. High resolution electron microscopy (HREM) is extremely effective for characterizing such features, as is illustrated here for gate oxides and tunneling oxides
  • Keywords
    electron microscopy; insulating thin films; integrated circuit technology; oxidation; silicon compounds; 10 nm; HREM analysis; SiO2-Si; VLSI device; gate oxide; high resolution electron microscopy; interface roughness; thickness; tunneling oxide; ultra-thin oxide; Electron microscopy; Fabrication; Image resolution; Lattices; Rough surfaces; Spatial resolution; Surface cleaning; Surface roughness; Surface treatment; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503545
  • Filename
    503545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1839510