• DocumentCode
    1839516
  • Title

    A non-traditional approach to resolving multi-layer process-induced metal voiding

  • Author

    Doan, Samantha L. ; Ang, Boon-Yong

  • Author_Institution
    Adv. Micro Devices Inc., Sunnyvale, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    279
  • Lastpage
    282
  • Abstract
    The effective use of SRAM bitmap, end-of-line failure analyses, in-line electron beam defect inspections and focused ion beam (FIB) to identify and resolve an integration-related metal voiding issue is demonstrated in this paper. Because the voiding mechanism was due to a post-metal, multi-layer process interaction, conventional in-line optical defect inspections failed to provide useful information. Electron beam defect inspections and FIB, on the other hand, provided a fast and accurate in-line assessment of the problem, thus enabling a timely resolution of this yield issue
  • Keywords
    SRAM chips; electron beam applications; failure analysis; focused ion beam technology; inspection; integrated circuit yield; voids (solid); SRAM bitmap; end-of-line failure analysis; focused ion beam; in-line electron beam defect inspection; in-line optical defect inspection; integrated circuit yield; multi-layer process-induced metal voiding; Corrosion; Electron beams; Electron optics; Etching; Failure analysis; Inspection; Optical device fabrication; Random access memory; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Symposium, 2001 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-6731-6
  • Type

    conf

  • DOI
    10.1109/ISSM.2001.962967
  • Filename
    962967