DocumentCode
1839516
Title
A non-traditional approach to resolving multi-layer process-induced metal voiding
Author
Doan, Samantha L. ; Ang, Boon-Yong
Author_Institution
Adv. Micro Devices Inc., Sunnyvale, CA, USA
fYear
2001
fDate
2001
Firstpage
279
Lastpage
282
Abstract
The effective use of SRAM bitmap, end-of-line failure analyses, in-line electron beam defect inspections and focused ion beam (FIB) to identify and resolve an integration-related metal voiding issue is demonstrated in this paper. Because the voiding mechanism was due to a post-metal, multi-layer process interaction, conventional in-line optical defect inspections failed to provide useful information. Electron beam defect inspections and FIB, on the other hand, provided a fast and accurate in-line assessment of the problem, thus enabling a timely resolution of this yield issue
Keywords
SRAM chips; electron beam applications; failure analysis; focused ion beam technology; inspection; integrated circuit yield; voids (solid); SRAM bitmap; end-of-line failure analysis; focused ion beam; in-line electron beam defect inspection; in-line optical defect inspection; integrated circuit yield; multi-layer process-induced metal voiding; Corrosion; Electron beams; Electron optics; Etching; Failure analysis; Inspection; Optical device fabrication; Random access memory; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962967
Filename
962967
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