DocumentCode
1839524
Title
Application of TOF-SIMS to microelectronics
Author
Chu, P.K.
Author_Institution
Evans Asia Ltd., Redwood City, CA, USA
fYear
1995
fDate
24-28 Oct 1995
Firstpage
742
Lastpage
744
Abstract
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed
Keywords
integrated circuit technology; mass spectroscopy; secondary ion mass spectroscopy; surface contamination; time of flight mass spectroscopy; 200 nm; TOF-SIMS; depth profiling; microelectronics; organic materials; shallow structures; surface chemical contamination; time-of-flight secondary ion mass spectrometry; Asia; Chemical analysis; Cities and towns; Electrons; Iron; Mass spectroscopy; Microelectronics; Semiconductor devices; Surface contamination; X-ray detection;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503546
Filename
503546
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