Title :
Application of TOF-SIMS to microelectronics
Author_Institution :
Evans Asia Ltd., Redwood City, CA, USA
Abstract :
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a powerful tool for the study of surface chemical contamination. State-of-the-art TOF-SIMS instruments are capable of detection limits in the ppm regime and spatial resolution on the order of 200 nm. This technique is particularly useful for organic studies and depth profiling of shallow structures. Several recent examples will be discussed
Keywords :
integrated circuit technology; mass spectroscopy; secondary ion mass spectroscopy; surface contamination; time of flight mass spectroscopy; 200 nm; TOF-SIMS; depth profiling; microelectronics; organic materials; shallow structures; surface chemical contamination; time-of-flight secondary ion mass spectrometry; Asia; Chemical analysis; Cities and towns; Electrons; Iron; Mass spectroscopy; Microelectronics; Semiconductor devices; Surface contamination; X-ray detection;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503546
