A new determination method of very low Fe contamination by UFS

Author

Lu, Dian-Tong ; Qingcheng, Zheng ; Mitchell, Ian V. ; Hemment, P.L.F. ; Ryssel, H.

Author_Institution

Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China

fYear

1995

fDate

24-28 Oct 1995

Firstpage

757

Lastpage

759

Abstract

We have produced very low Fe-dose (10⁸-10⁹ Fe/cm²) implanted Si samples. A new method of Ultraviolet Fluorescence Spectra (UFS) measurements has been used to determine the contents of Fe on the surfaces of Fe-implanted samples. We find that the Fe-impurities have their own ultraviolet fluorescent peak wavelength at room temperature and their characteristic spectral peak intensities are proportional to the Fe-doses (Fe-concentrations) in Fe implanted Si samples. This method is very sensitive, efficient and nondestructive for testing the Fe contamination on silicon. Some SOI (Silicon on Insulator) wafers and VLSI chips were evaluated with the UFS method. The results indicate that the UFS method is able to measure the very low Fe-contamination. The limit is below (10⁸-10⁹) Fe/cm² or (10¹³-10¹⁴) Fe/cm³ in Si samples

Keywords

VLSI; characteristics measurement; elemental semiconductors; fluorescence; impurity distribution; integrated circuit measurement; ion implantation; iron; silicon; silicon-on-insulator; SOI; Si:Fe; UFS; VLSI chips; characteristic spectral peak intensities; fluorescent peak wavelength; ultraviolet fluorescence spectra measurements; Fluorescence; Iron; Nondestructive testing; Pollution measurement; Semiconductor device measurement; Silicon on insulator technology; Surface contamination; Temperature sensors; Very large scale integration; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503550

Filename

503550