Title :
Process and Circuit Optimization for Power Reduction Using DDC Transistors
Author_Institution :
SuVolta, Los Gatos, CA, USA
Abstract :
The Deeply Depleted Channel (DDC) transistor architecture offers 2 to 3 times improvement in body coefficient and 60 percent improvement in local mismatch in 55-nm technology, extending design techniques such as body biasing with voltage scaling to more recent technology nodes. This article presents a body bias architecture for adaptive correction of manufacturing variation, with less than 0.5 percent area penalty for the bias generators. Process monitors with digital readout independently detect p-channel MOS (PMOS) and n-channel MOS (NMOS) process windows. Fujitsu Semiconductor Limited offers DDC technology in its CS250S 55-nm production qualified process, and is currently in production with its first DDC product, a seventh-generation Milbeaut digital-camera processor that performs at twice the performance of the previous generation with 30 percent less power.
Keywords :
MOSFET; digital readout; CS250S production qualified process; DDC technology; DDC transistor architecture; Fujitsu Semiconductor Limited; NMOS process window detection; PMOS process window detection; adaptive correction; area penalty; bias generators; body bias architecture; body biasing; body coefficient; circuit optimization; deeply-depleted channel transistor architecture; design technique; digital readout; manufacturing variation; n-channel MOS process window detection; p-channel MOS process window detection; power reduction; process monitors; seventh-generation Milbeaut digital-camera processor; size 55 nm; technology nodes; voltage scaling; Computer architecture; Logic gates; Manufacturing; Performance evaluation; Program processors; Random access memory; System-on-chip; Threshold voltage; Transistors; built-in tests; low-power design;
Journal_Title :
Micro, IEEE