Title :
Super compact RFIC inductors in 0.18 /spl mu/m CMOS with copper interconnects
Author :
Feng, H. ; Jelodin, G. ; Gong, K. ; Zhan, R. ; Wu, Q. ; Chen, C. ; Wang, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
Design of super compact on-chip inductors with deep-shrunk dimension of 22 /spl mu/m/spl times/23 /spl mu/m, as opposed to several hundreds /spl mu/m by several hundreds gm, is reported. Implemented in a 6-metal all-copper 0.18 /spl mu/m CMOS process, a flat inductor value of 10 nH up to 4 GHz, satisfactory to many typical RFIC applications, is achieved. The aggressive shrinkage reduces parasitic capacitance substantially and makes it realistic and cost-effective to realize single-chip RFICs in very deep sub-micron technologies. A new inductor model is proposed for accuracy. A 2.4 GHz LNA circuit with on-chip matching using the compact inductor is demonstrated.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; equivalent circuits; inductors; integrated circuit interconnections; integrated circuit metallisation; 2.4 GHz; Bluetooth; LNA circuit; RFIC inductors; RLC tank model; aggressive shrinkage; all-copper CMOS process; copper interconnects; equivalent circuit; flat inductor value; mutual coupling effect; on-chip matching; parasitic capacitance; relative Q-factor; single-chip; stacked spiral inductor; super compact on-chip inductors; CMOS technology; Copper; Equivalent circuits; Inductance; Inductors; Integrated circuit interconnections; Mutual coupling; Radiofrequency integrated circuits; Semiconductor device modeling; Spirals;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012087
