High performance single supply power amplifiers for GSM and DCS applications using true enhancement mode FET technology

Author

Glass, E. ; Shields, M. ; Reyes, A.

Author_Institution

Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA

fYear

2002

fDate

3-4 June 2002

Firstpage

447

Lastpage

450

Abstract

Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do not require the use of a drain switch. In addition, due to a high threshold voltage (Vth=+0.6V), they exhibit excellent RF isolation at Vref=0.1V and Pin=+5 dBm and do not require on-chip attenuators.

Keywords

UHF field effect transistors; UHF integrated circuits; UHF power amplifiers; cellular radio; leakage currents; 3.2 V; CW conditions; DCS applications; GSM applications; high performance power amplifier; high threshold voltage; low leakage currents; plastic package; single supply power amplifier IC; three-stage amplifier; true enhancement mode FET; Application specific integrated circuits; Distributed control; FET integrated circuits; GSM; High power amplifiers; Leakage current; Power amplifiers; Power generation; Power supplies; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE

Conference_Location

Seattle, WA, USA

ISSN

1529-2517

Print_ISBN

0-7803-7246-8

Type

conf

DOI

10.1109/RFIC.2002.1012088

Filename

1012088