DocumentCode :
1839675
Title :
Bond pad F-crystal defect control and monitoring
Author :
Chen, J.S. ; Wei, L.K. ; Chang, Y.P. ; Huang, C.C.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fYear :
2001
fDate :
2001
Firstpage :
297
Lastpage :
299
Abstract :
Bonding pad crystal defect was observed on wafers before die saw. To eliminate and monitor the defect, a study was conducted to investigate the effect of humidity and packaging materials (packaging sponge and lint free paper material) on pad crystal defect generation. Ionic content specification of packaging sponge material was defined through the study. A setup for routine monitoring of pad crystal defect was constructed and implemented in wafer fabrication. The pad crystal defects were F rich. Humidity (>55%) was found to be an effective acceleration factor of the defect. With a 70% humidity stress test, a F content limit of 400 ppb in packaging sponge material was concluded to prevent defect generation. Air non-permeable lint free paper was found to provide further protection of the wafers from pad crystal defect
Keywords :
crystal defects; environmental degradation; fluorine; humidity; packaging; wafer bonding; F; bond pad F-crystal defect; defect control; defect monitoring; die saw; humidity effect; ionic content; lint-free paper; packaging material; sponge; wafer fabrication; Acceleration; Conducting materials; Crystalline materials; Fabrication; Humidity; Materials testing; Monitoring; Packaging; Stress; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962971
Filename :
962971
Link To Document :
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