Title :
Cleaning technique of hot-wall batch type Ru CVD equipment by oxygen gas
Author :
Choi, D. ; Nozu, D. ; Hasebe, K. ; Shibata, T. ; Nakao, K. ; Izuha, M. ; Akahori, H. ; Aoyama, T. ; Eguchi, K. ; Hieda, K. ; Arikado, T. ; Okumura, K.
Author_Institution :
Process Eng. Dept., Tokyo Electron Tohoku Ltd., Nirasaki, Japan
Abstract :
The gas cleaning of the hot-wall batch type Ru CVD reactor by oxygen was investigated. The cleaning mechanism is considered as follows. Below 800°C, Ru film is oxidized and forms RuO2 which is not volatile. But above 800°C, RuO2 film, which is formed at first, is oxidized again to form RuO4. Since RuO 4 is volatile, it evaporates easily. High temperature, low pressure and high oxygen flow rate were required to obtain fast Ru etching rate. With these optimum cleaning conditions by design of experiments (DOE), 30-nm-thick Ru film was removed completely in 20 minutes. We could accomplish this in situ oxygen gas cleaning effectively in short time by using hot-wall batch type Ru CVD equipment, which has high heating and cooling rate characteristics
Keywords :
chemical vapour deposition; design of experiments; oxidation; ruthenium; surface cleaning; 800 C; O2; Ru; Ru film; RuO2; RuO4; design of experiments; hot-wall batch-type Ru CVD reactor; oxidation; oxygen gas cleaning; Cleaning; Cooling; Electrodes; Etching; Heating; Inductors; Oxygen; Scanning electron microscopy; Temperature; US Department of Energy;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962972
