DocumentCode :
1839744
Title :
Influence of CMP process on defects in SiOC films and TDDB reliability
Author :
Konishi, Nobuhiro ; Yamada, Youhei ; Noguchi, Junji ; Jimbo, Tomoko ; Inoue, O.
Author_Institution :
Micro Device Div., Hitachi Ltd., Tokyo, Japan
fYear :
2005
fDate :
6-8 June 2005
Firstpage :
123
Lastpage :
125
Abstract :
The relationship between the TDDB (time-dependent dielectric breakdown) reliability and defects in the Cu CMP (chemical-mechanical polishing) process, such as corrosions, scratches and pittings, was investigated using Cu/SiOC interconnects. Cu corrosions generate at edges of wires and this results in the TDDB degradation. Scratches on the SiOC surface also degrade the TDDB lifetime even if other defects are removed. The slurry without the BTA solutions causes not only pittings, but also Cu dissolution. In this condition, some dissolved Cu atoms remain on the SiOC surface between adjacent Cu wires. This also leads to the TDDB degradation. It is essential to prevent corrosions, scratches and pittings to improve the TDDB reliability.
Keywords :
chemical mechanical polishing; copper; corrosion; dielectric thin films; electric breakdown; integrated circuit interconnections; integrated circuit reliability; silicon compounds; CMP process; Cu; SiOC; TDDB reliability; carbon-doped oxide; carbon-doped silicon oxide films; chemical-mechanical polishing; copper interconnects; corrosion; dissolved copper atoms; pittings; scratches; Chemicals; Cleaning; Corrosion; Degradation; Dielectrics; Inspection; Protection; Slurries; Wires; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
Type :
conf
DOI :
10.1109/IITC.2005.1499950
Filename :
1499950
Link To Document :
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