Title :
Emitter polysilicon process optimization by RGA and process proposal for interfacial oxide growth using ozonated water
Author :
Willis, Carl ; Foglietti, Pietro ; Artinger, Josef
Author_Institution :
Texas Instruments GmbH, Freising, Germany
Abstract :
A residual gas analyzer (RGA) has been employed to analyse trace gases in a LPCVD polysilicon reactor used for emitter polysilicon process. Process steps leading up to this oxidation have been characterized in terms of water and oxygen partial pressure. An alternative process of an ozonated water rinse in the preceding wet clean is proposed in order to grow a stable and reliable ultra-thin layer of chemical oxide
Keywords :
CVD coatings; chemical analysis; elemental semiconductors; oxidation; silicon; surface cleaning; LPCVD reactor; Si; emitter polysilicon process optimization; interfacial oxide growth; oxidation; ozonated water rinse; residual gas analyzer; trace gas analysis; wet cleaning; Boats; Furnaces; Inductors; Instruments; Mass spectroscopy; Oxidation; Performance gain; Proposals; Silicon; Temperature;
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
DOI :
10.1109/ISSM.2001.962973
