Title :
The enabling solution of Cu/low-k planarization technology
Author :
Wada, Yutaka ; Noji, Ikutarou ; Kobata, Itsuki ; Kohama, Tatsuya ; Fukunaga, Akira ; Tsujimura, Manabu
Author_Institution :
Precision Machinery Group, Ebara Corp., Kanagawa, Japan
Abstract :
The electro-chemical polishing in DI water ("ECP-DI" technology) and the advanced CMP technology ("mC2") are introduced, as a new noble low down-force planarization technology. Each process is developed for the Cu bulk polishing step of Cu/ultra low-k devices. The ECP-DI is governed by Faraday\´s law, and that principle involves \´di-plating\´ of only the part coming into contact with the ion exchange film. Advanced CMP is a process which is not governed by Preston\´s law, but by the dissolution law.
Keywords :
chemical mechanical polishing; electrolytic polishing; integrated circuit interconnections; integrated circuit metallisation; planarisation; Faraday law; Preston law; advanced CMP technology; copper interconnects; copper/low-k planarization technology; deionised water; di-plating; dissolution law; electro-chemical polishing; ion exchange film; low-k materials; semiconductor devices; Chemical technology; Delay; Electrodes; Machinery; Planarization; Semiconductor devices; Semiconductor films; Semiconductor materials; Surface contamination; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499951
