• DocumentCode
    1839807
  • Title

    Low temperature bipolar transistor operated in a hybrid-mode compatible with CMOS technology

  • Author

    Li, Shurong ; Zheng, Yunguang ; Guo, Weilian ; Jiang, Liang ; Liang, Huilai ; Wang, Yiming ; Liu, Litian ; Zhijian Li

  • Author_Institution
    Dept. of Electron. Eng., Tianjin Univ., China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    784
  • Lastpage
    786
  • Abstract
    In this paper, a resistance RGB has been introduced between Gate and Base of a bipolar/MOSFET hybrid-mode Lateral low temperature bipolar transistor. By controlling the Voltage VGB that results from base current flowing on RGB, and using the property of hFE and Ic varying with VGB sensitively, the current driving capability, the hFE uniformity, and then the performance of the device can be improved significantly
  • Keywords
    MOSFET; bipolar transistors; cryogenic electronics; CMOS technology; bipolar/MOSFET hybrid-mode lateral low temperature bipolar transistor; current driving; current gain uniformity; resistance; Bipolar transistors; Bismuth; CMOS technology; Doping; Electrons; MOSFET circuits; Microelectronics; Temperature sensors; Transconductance; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503559
  • Filename
    503559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1839807