DocumentCode :
1839810
Title :
Polymer control in aluminum etch chambers to achieve >450 hours MTBC
Author :
Grenci, Charles ; Sauers, Victor ; King, Robert ; Dodge, Daniel ; Schlecht, Martin ; Gray, Kevin ; Foley, Rick
Author_Institution :
Galiso Inc., Montrose, CO, USA
fYear :
2001
fDate :
2001
Firstpage :
313
Lastpage :
316
Abstract :
Particle control is an important objective in Al etch systems. Unquestionably, polymer buildup must be kept under control. Defects, which result from chamber flaking, typically bridge metal lines together, resulting in lower yield. Excessive polymer buildup requires a chamber wetclean, consuming manpower and equipment uptime. Currently, most metal etch process chambers in the world require a wet clean at 90 - 150 hours. This article presents measures to control polymer buildup, and a qualification procedure to ensure the cleanliness of the chamber prior to running product. It will also show how Cypress Semiconductor has improved its metal etch mean time between cleans to 350 - 450 RF hours while improving yield
Keywords :
etching; integrated circuit interconnections; integrated circuit yield; production control; surface cleaning; 350 to 450 hr; Al; Cypress Semiconductor; MTBC; chamber flaking; chamber wetclean; etch chambers; mean time between clean; metal etch process; particle control; polymer control; qualification procedure; yield; Aluminum; Artificial intelligence; Plasma applications; Polymers; Radio frequency; Temperature measurement; Thermal stresses; Tin; Wet etching; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-6731-6
Type :
conf
DOI :
10.1109/ISSM.2001.962975
Filename :
962975
Link To Document :
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