Title :
BMHMT: device & model
Author :
Chen, Ping ; Li, Zhijian ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A kind of Bi-MOS Hybrid-Mode transistor (BMHMT) and its analytical model are proposed. Both experiment and simulation confirm our conclusions
Keywords :
MOSFET; bipolar transistors; semiconductor device models; BMHMT; Bi-MOS Hybrid-Mode transistor; analytical model; Analytical models; BiCMOS integrated circuits; CMOS technology; Charge carrier processes; Hybrid junctions; MOSFET circuits; Microelectronics; Transportation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503560
