DocumentCode
1840005
Title
A Non-Linear High-Power MESFET Amplifier Model Verified by Waveform and Load-Pull Measurements
Author
Wei, C.J. ; Lan, Y. ; Tkachenko, Y.A. ; Hwang, J. C M
Author_Institution
Lehigh University, 19 Memorial Dr W, Bethlehem PA 18015, USA, Phone: (215) 758-5109; Fax: (215) 758-5941
Volume
25
fYear
1994
fDate
34455
Firstpage
117
Lastpage
120
Abstract
A high-power metal-semiconductor field-effect transistor amplifier model was developed based on novel theoretical features and experimental verification techniques. The model accurately predicts the amplifier output characteristics, including power, efficiency and linearity, as functions of bias, input and load conditions. Detailed variation of intermodulation distortion with input power was explained. Self-biasing and tuning schemes to improve amplifier linearity were predicted and verified experimentally.
Keywords
Bonding; Circuit simulation; Equivalent circuits; FETs; High power amplifiers; Linearity; MESFET circuits; Power amplifiers; Power generation; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Spring, 43rd
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1994.327067
Filename
4119740
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