DocumentCode
1840032
Title
Low-loss RF MEMS fixed free capacitive switch characterization
Author
Thakur, S.K. ; SumithraDevi, K.A. ; Rajput, Sujeet Singh
Author_Institution
Naval Res. Board, DRDO, New Delhi, India
fYear
2009
fDate
14-16 Dec. 2009
Firstpage
1
Lastpage
4
Abstract
RF MEMS are small mechanical devices fabricated by photolithographic processes, which are used for elemental signal processing functions in RF and microwave, frequency circuits. The design of low loss RF MEMS fixed free capacitive switch is explained. The most common RF MEMS control component is a microwave transmission line switch, currently under development for applications requiring low insertion loss, high linearity, moderate switching speeds and low to moderate power. These shunt switches possess a movable metal membrane which pulls down onto a metal dielectric sandwich to form a capacitive switch. These switches exhibit low loss (<0.25 dB at 35 GHz) with good isolation (35 dB at 35 GHz).This paper gives the construction and performance of low loss RF MEMS Fixed Free switches at microwave and millimetre-wave frequencies (0.1 to 100 Ghz) and also describes the improvements in the design of the switch.
Keywords
dielectric materials; microswitches; photolithography; transmission lines; RF MEMS control component; elemental signal processing functions; fixed free capacitive switch; low-loss RF MEMS; metal dielectric sandwich; microwave transmission line switch; photolithographic process; shunt switches; small mechanical devices; CMOS; Emag; MEMS; RF; Thermoelectromechanical; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Electromagnetics Conference (AEMC), 2009
Conference_Location
Kolkata
Print_ISBN
978-1-4244-4818-0
Electronic_ISBN
978-1-4244-4819-7
Type
conf
DOI
10.1109/AEMC.2009.5430611
Filename
5430611
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