• DocumentCode
    1840032
  • Title

    Low-loss RF MEMS fixed free capacitive switch characterization

  • Author

    Thakur, S.K. ; SumithraDevi, K.A. ; Rajput, Sujeet Singh

  • Author_Institution
    Naval Res. Board, DRDO, New Delhi, India
  • fYear
    2009
  • fDate
    14-16 Dec. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    RF MEMS are small mechanical devices fabricated by photolithographic processes, which are used for elemental signal processing functions in RF and microwave, frequency circuits. The design of low loss RF MEMS fixed free capacitive switch is explained. The most common RF MEMS control component is a microwave transmission line switch, currently under development for applications requiring low insertion loss, high linearity, moderate switching speeds and low to moderate power. These shunt switches possess a movable metal membrane which pulls down onto a metal dielectric sandwich to form a capacitive switch. These switches exhibit low loss (<0.25 dB at 35 GHz) with good isolation (35 dB at 35 GHz).This paper gives the construction and performance of low loss RF MEMS Fixed Free switches at microwave and millimetre-wave frequencies (0.1 to 100 Ghz) and also describes the improvements in the design of the switch.
  • Keywords
    dielectric materials; microswitches; photolithography; transmission lines; RF MEMS control component; elemental signal processing functions; fixed free capacitive switch; low-loss RF MEMS; metal dielectric sandwich; microwave transmission line switch; photolithographic process; shunt switches; small mechanical devices; CMOS; Emag; MEMS; RF; Thermoelectromechanical; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Electromagnetics Conference (AEMC), 2009
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4244-4818-0
  • Electronic_ISBN
    978-1-4244-4819-7
  • Type

    conf

  • DOI
    10.1109/AEMC.2009.5430611
  • Filename
    5430611