DocumentCode
1840163
Title
A low noise CMOS preamplifier for femtoampere current detection
Author
Zhang, Ming ; Llaser, Nicolas ; Mathias, Herve
Author_Institution
MiNaSys, Univ. of Paris XI, Orsay
fYear
2008
fDate
18-21 May 2008
Firstpage
2094
Lastpage
2097
Abstract
This paper presents a low noise CMOS preamplifier for femtoampere detection. Based on a classical charge amplifier, a ping-pong technique is proposed to reset the charge amplifier, keeping the preamplifier stable even in a strong parasitic DC current. With a low reset frequency, the undesired folding noise is greatly reduced and the signal-to-noise ratio (SNR) at the output can be kept almost constant. The simulation results show that using the proposed preamplifier, the output SNR can still be 72 for an input current of 200 fA among a parasitic DC current of 100 pA. The dynamic range is observed over 120 dB.
Keywords
CMOS integrated circuits; electric current measurement; integrated circuit noise; low noise amplifiers; charge amplifier; femtoampere current detection; input current; low noise CMOS preamplifier; parasitic DC current; ping-pong technique; signal-to-noise ratio; Current measurement; Dynamic range; Feedback; Low-frequency noise; Low-noise amplifiers; Noise reduction; Preamplifiers; Resonant frequency; Rotation measurement; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location
Seattle, WA
Print_ISBN
978-1-4244-1683-7
Electronic_ISBN
978-1-4244-1684-4
Type
conf
DOI
10.1109/ISCAS.2008.4541862
Filename
4541862
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