Title :
Dual damascene process for air-gap Cu interconnects using conventional CVD films as sacrificial layers
Author :
Uno, Shouichi ; Noguchi, Junji ; Ashihara, Hiroshi ; Oshima, Takayuki ; Sato, Kiyohiko ; Konishi, Nobuhiro ; Saito, Tatsuyuki ; Hara, Kazusato
Author_Institution :
Micro Device Div., Hitachi Ltd., Tokyo, Japan
Abstract :
A dual damascene Cu air-gap interconnect was investigated. To solve issues such as cost and electrical shorts from CMP scratches, a conventional CVD film was used as a sacrificial layer instead of the SOD film that we reported previously. The process integration, electrical characteristics and the TDDB reliability were discussed. The TDDB lifetime was drastically improved, and 4 levels of dual damascene Cu interconnects were successfully fabricated.
Keywords :
CVD coatings; copper; electric breakdown; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; CMP scratches; CVD film sacrificial layers; Cu; TDDB lifetime; TDDB reliability; air-gap interconnects; dual damascene process; electrical shorts; process integration; Air gaps; Costs; Delay; Dielectrics; Electric variables; Etching; Plasma applications; Protection; Surface treatment; Wire;
Conference_Titel :
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN :
0-7803-8752-X
DOI :
10.1109/IITC.2005.1499969
