Flip-chip mounted, Ku band power amplifier compliant with space applications

Author

Vendier, O. ; Fraysse, J.-P. ; Schaffauser, C. ; Paillard, M. ; Drevon, C. ; Cazaux, J.-L. ; Floriot, D. ; Caillas-Devignes, N. ; Blanck, H. ; Auxemery, P. ; de Ceuninck, W. ; Petersen, R. ; Haese, N. ; Rolland, P.-A.

Author_Institution

Alcatel Space, Toulouse, France

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1389

Abstract

Following the trends of today´s increased power density into power components arena, latest developments on advanced thermal management at component level are presented. Power flip chip technology was applied to commercial HB20P heterostructure bipolar transistor technology from UMS. Results of flip-chip mounted high power amplifier on Aluminum Nitride, packaged in a space compatible micro-package are discussed.

Keywords

III-V semiconductors; aluminium compounds; bipolar transistor circuits; flip-chip devices; heterojunction bipolar transistors; microwave power amplifiers; space vehicle electronics; thermal management (packaging); wide band gap semiconductors; AlN; HB20P technology; Ku-band power amplifier; aluminum nitride substrate; flip-chip mounting; heterostructure bipolar transistor; space micro-package; thermal management; Fingers; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; Packaging; Power amplifiers; Space technology; Temperature; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012114

Filename

1012114