Title :
Flip-chip mounted, Ku band power amplifier compliant with space applications
Author :
Vendier, O. ; Fraysse, J.-P. ; Schaffauser, C. ; Paillard, M. ; Drevon, C. ; Cazaux, J.-L. ; Floriot, D. ; Caillas-Devignes, N. ; Blanck, H. ; Auxemery, P. ; de Ceuninck, W. ; Petersen, R. ; Haese, N. ; Rolland, P.-A.
Author_Institution :
Alcatel Space, Toulouse, France
Abstract :
Following the trends of today´s increased power density into power components arena, latest developments on advanced thermal management at component level are presented. Power flip chip technology was applied to commercial HB20P heterostructure bipolar transistor technology from UMS. Results of flip-chip mounted high power amplifier on Aluminum Nitride, packaged in a space compatible micro-package are discussed.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistor circuits; flip-chip devices; heterojunction bipolar transistors; microwave power amplifiers; space vehicle electronics; thermal management (packaging); wide band gap semiconductors; AlN; HB20P technology; Ku-band power amplifier; aluminum nitride substrate; flip-chip mounting; heterostructure bipolar transistor; space micro-package; thermal management; Fingers; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; Packaging; Power amplifiers; Space technology; Temperature; Thermal management;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012114
