DocumentCode
18403
Title
Development of Polycrystalline Silicon Based Photonic Crystal Membrane for Mid-Infrared Applications
Author
Chong Pei Ho ; Pitchappa, Prakash ; Kropelnicki, Piotr ; Jian Wang ; Yuandong Gu ; Chengkuo Lee
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Volume
20
Issue
4
fYear
2014
fDate
July-Aug. 2014
Firstpage
94
Lastpage
100
Abstract
Free-standing polycrystalline silicon (Si) based photonic crystal (PhC) membranes with etched circular and square holes are developed to display high reflectivity in the mid-infrared (MIR) region. Greater than 90% reflection was measured in the MIR wavelengths around 3.58 μm. By using square air holes in the PhC membrane, the mechanical strength of the polycrystalline Si membrane can be enhanced as square air holes have a lower filling factor of 36% of air holes, compared to 49% in circular air holes while keeping the reflectance around 3.45 μm more than 90%. Such Si PhC membranes offer opportunities for specific applications like filters. To illustrate the feasibility of such devices, simulation works are done by configuring two Si PhC membranes to create a Fabry-Perot interferometer operating in MIR region. The filtered peak shows a full width half maximum of 0.08 nm which corresponds to a quality factor of around 43800, thus demonstrating the possibility of high-resolution applications such as gas sensing and hyperspectral imaging.
Keywords
Fabry-Perot interferometers; elemental semiconductors; photonic crystals; reflectivity; silicon; Fabry-Perot interferometer; Si; etched circular; full width half maximum; gas sensing; high reflectivity; high-resolution applications; hyperspectral imaging; midinfrared applications; photonic crystal membrane; polycrystalline silicon; quality factor; square holes; Atmospheric modeling; Cavity resonators; Mirrors; Photonic band gap; Q-factor; Silicon; Wavelength measurement; Fabry–Perot; optical properties; photonic crystals; thin films;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2013.2294463
Filename
6680624
Link To Document