• DocumentCode
    1840376
  • Title

    Study and Development of On-Wafer Cryogenic Calibration Techniques

  • Author

    Nishimoto, M. ; Hamai, M. ; Laskar, J.

  • Author_Institution
    Electrical Engineering Department, University of Hawaii, 2540 Dole Street, Honolulu, Hawaii 96822
  • Volume
    26
  • fYear
    1994
  • fDate
    Dec. 1994
  • Firstpage
    63
  • Lastpage
    67
  • Abstract
    In recent years significant progress has been made in the development of cryogenic, on-wafer probing systems [reference 1-6]. The major shortcoming of previous efforts has been the lack of a repeatable and accurate system yielding results comparable to room temperature systems. A quantitative study must be performed to determine measurement accuracy and repeatability. Most importantly, without such verification and knowledge, researchers have failed to develop effective on-wafer S-parameter and noise parameter calibration techniques. We implement a two-tier calibration algorithm [reference 7] for cryogenic on-wafer calibrations. We demonstrate, for the first time, that cryogenic on-wafer calibrations are quantitatively comparable with room temperature calibration results.
  • Keywords
    Calibration; Cryogenics; Frequency; Measurement standards; NIST; Performance evaluation; Satellites; Scattering parameters; Semiconductor device noise; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Fall, 44th
  • Conference_Location
    Boulder, CO, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1994.327082
  • Filename
    4119757