DocumentCode
1840376
Title
Study and Development of On-Wafer Cryogenic Calibration Techniques
Author
Nishimoto, M. ; Hamai, M. ; Laskar, J.
Author_Institution
Electrical Engineering Department, University of Hawaii, 2540 Dole Street, Honolulu, Hawaii 96822
Volume
26
fYear
1994
fDate
Dec. 1994
Firstpage
63
Lastpage
67
Abstract
In recent years significant progress has been made in the development of cryogenic, on-wafer probing systems [reference 1-6]. The major shortcoming of previous efforts has been the lack of a repeatable and accurate system yielding results comparable to room temperature systems. A quantitative study must be performed to determine measurement accuracy and repeatability. Most importantly, without such verification and knowledge, researchers have failed to develop effective on-wafer S-parameter and noise parameter calibration techniques. We implement a two-tier calibration algorithm [reference 7] for cryogenic on-wafer calibrations. We demonstrate, for the first time, that cryogenic on-wafer calibrations are quantitatively comparable with room temperature calibration results.
Keywords
Calibration; Cryogenics; Frequency; Measurement standards; NIST; Performance evaluation; Satellites; Scattering parameters; Semiconductor device noise; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Fall, 44th
Conference_Location
Boulder, CO, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1994.327082
Filename
4119757
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