Title :
Intrinsic noise characteristics of AlGaN/GaN HEMTs
Author :
Sungjae Lee ; Tilak, V. ; Webb, K.J. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
Intrinsic noise sources and their correlation in AlGaN/GaN HEMTs are extracted and studied. Using three noise parameters obtained from microwave noise measurements and S-parameter data, two intrinsic noise sources and their correlation are specified by applying a noise deembedding technique, and their dependence on frequency and bias point is investigated.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; S-parameter data; bias point dependence; frequency dependence; intrinsic noise characteristics; microwave noise measurements; noise deembedding technique; noise parameters; Aluminum gallium nitride; Circuit noise; Frequency; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Microwave devices; Noise figure; Noise measurement;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012120
