New spin-on oxycarbosilane low-k dielectric materials with exceptional mechanical properties

Author

Geraud, Dubois ; Magbitang, Teddie ; Volksen, Willi ; Simonyi, Eva E. ; Miller, Robert D.

Author_Institution

IBM Almaden Res. Center, San Jose, CA, USA

fYear

2005

fDate

6-8 June 2005

Firstpage

226

Lastpage

228

Abstract

Bridged oxycarbosilane monomers are excellent precursors for the formation of spin on porous low-k materials using sacrificial pore generators. The measured Young´s modulus numbers for the as-synthesized thin films without any post porosity toughening are the highest by far of any that we have observed for porous films generated using the sacrificial porogen route. For a given dielectric constant, the Young´s modulus of these oxycarbosilane films are 4-5 times higher than available organosilicates and at least 2 times higher than UV treated organosilicate materials.

Keywords

Young´s modulus; dielectric thin films; organic compounds; permittivity; porous materials; sol-gel processing; spin coating; Young´s modulus; bridged oxycarbosilane monomers; dielectric constant; low-k dielectric materials; porous thin film spin-on formation; precursors; sacrificial pore generators; sacrificial porogen; sol-gel process; Dielectric constant; Dielectric materials; Dielectric measurements; Dielectric thin films; Mechanical factors; Nanoporous materials; Optical films; Optical pulse generation; Polymer films; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499991

Filename

1499991