Air gap integration for the 45nm node and beyond

Author

Daamen, R. ; Verheijden, G. J A M ; Bancken, P.H.L. ; Vandeweyer, T. ; Michelon, J. ; Hoang, V. Nguyen ; Hoofman, R.J.O.M. ; Gallaghe, M.K.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2005

fDate

6-8 June 2005

Firstpage

240

Lastpage

242

Abstract

First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectric constant (k_eff) is demonstrated to be 1.45 for non-passivated single damascene structures. Using 45 nm node specifications and the proposed integration scheme, two metal levels are simulated showing a k_eff of less than 2.0 after full integration, fulfilling multiple future interconnect node requirements.

Keywords

air; electromigration; integrated circuit interconnections; mechanical stability; permittivity; 45 nm; IMD level; effective dielectric constant; electromigration; extendable air gap integration; inter-metal dielectric; interconnect node; mechanically stable air cavities; metal levels; nonpassivated single damascene structures; reliability; Air gaps; Capacitance; Copper; Data mining; Dielectric constant; Dielectric materials; Dielectric measurements; Materials reliability; Polymers; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499997

Filename

1499997